Search results for "circuit breakers"
Bel Power Solutions announces titanium rated series of CRPS
Bel Power Solutions has announced the TEC Series, a new series of power supplies that offers Titanium level efficiency (up to 96%) for server, storage and networking applications.
Interactive datasheets put MOSFET behaviour analysis at engineers’ fingertips
Nexperia, the essential semiconductor expert, has announced a significant raising of the bar in semiconductor engineer design support with the release of next-generation interactive datasheets to accompany its Power MOSFETs.
Automotive-grade PolarP P-Channel enhancement mode power MOSFET
Littelfuse, Inc. announced the release of IXTY2P50PA, the first automotive-grade PolarP P-Channel Power MOSFET. This product design meets the demanding requirements of automotive applications, providing high performance and reliability.
WIN SOURCE at PCIM
At PCIM 2023, Freda King, Service Manager at WIN SOURCE, talks to Electronic Specifier’s Contributing Editor, Caroline Hayes, about Win Source’s broad product portfolio, it’s commitment to sustainable development, and the advantages of being an international supplier to the electronics industry.
Operational amplifiers target precision applications
The ADA4099 series of high-performance operational amplifiers from Analog Devices are designed to meet the demands of modern precision applications.
Time-of-flight sensor ranges up to 5 metres
Authorised distributor Mouser Electronics is now shipping the ICU-20201 Time-of-Flight (ToF) range sensor from TDK InvenSense.
Smart fabrics can tell you where to go
A wearable, textile-based device developed by Rice University engineers could help declutter, enhance — and, in the case of impairments — compensate for deficiencies in visual and auditory inputs.
CGD’s second series iceGaN ICs deliver robustness, ease, and efficiency
Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, has launched the second series of its ICeGaN 650V gallium nitride HEMT family, delivering robustness, ease-of-use and maximised efficiency.
The next generation of dual-channel isolated gate driver ICs
Today’s 3.3kW switched-mode power supplies (SMPS) can achieve power densities of 100W/inch³ by utilising the latest technologies, including superjunction (SJ silicon) and silicon carbide (SiC) power MOSFETs in the totem-pole PFC stage as well as gallium nitride (GaN) power switches for high-voltage DC-DC stage operation.
JET experiments to test electronics in fusion environments
A joint study by the UK Atomic Energy Authority (UKAEA), CERN, EUROfusion, CEA-IRFM, Aix-Marseille University (AMU), CNRS, and University of Rennes, at the Joint European Torus (JET) facility in Culham, Oxfordshire, will investigate the impact of neutrons on the performance of electronics exposed to fusion energy conditions.