Search results for "MOSFET"

Efficient Power Conversion (EPC) has announced that the China National Intellectual Property Administration (CNIPA) has validated the claims of EPC patent titled “Compensated gate MOSFET and method for fabricating the same” (Chinese Patent No. ZL201080015425.X) for enhancement-mode GaN semiconductor devices.

SemiQ, a provider of silicon carbide (SiC) solutions for high-performance and high-voltage applications, has launched a known-good-die (KGD) screening programme.

STMicroelectronics has announced the L99H92 automotive DC motor pre-driver for system monitoring.

Infineon Technologies introduces theMOTIX TLE9140EQW gate driver ICfor brushless DC motors targeting the demanding 24/48 V market.

The emergence of EV DC charging presents a promising business venture for companies specialising in power electronics.

Infineon Technologies supplies its power semiconductor devices to FOXESS, a fast-growing specialist in the green energy industry and a manufacturer of inverters and energy storage systems.

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency.

Toshiba has launched a new range of 650V N-channel power MOSFETs, the TK042N65Z5 and TK095N65Z5 in TO-247 package.

The DRV835xF family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes.

Toshiba has launched a motor control driver IC that implements a gate driver and a CPU core together with a comprehensive set of features and capabilities for driving three-phase brushless DC (BLDC) motors and permanent magnet synchronous motors (PMSM) more efficiently.