Search results for "vishay"

Vishay Intertechnology, Inc. (NYSE: VSH) today unveiled the industry's smallest and thinnest n-channel chipscale power MOSFET and the first with a sub-1-mm2 outline. The 20-V MICRO FOOT® Si8800EDB combines an ultra-small 0.8-mm by 0.8 mm outline with a height of 0.357 mm to save space in portable electronics.

Vishay Intertechnology introduced a new dual 12-V p-channel TrenchFET Gen III power MOSFET with the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK® SC-70 2-mm by 2-mm footprint area.

Vishay announced a new device in the microBUCK family of integrated synchronous buck regulators. The 6-A SiC414 is a dc-to-dc converter solution featuring an advanced controller IC with gate drivers, two PWM-optimized n-channel MOSFETs (high and low side), and a bootstrap switch in a standalone buck regulator configuration in a space-saving MLPQ 4-mm by 4-mm 28-pin package.

Vishay unveiled the first 30-V p-channel TrenchFET Gen III power MOSFET in the PowerPAK 1212-8 package. The device features the industry's lowest on-resistance for a p-channel MOSFET with this voltage rating in the 3.3-mm by 3.3-mm footprint area.

Vishay has introduced the first asymmetric dual TrenchFET power MOSFET in the PowerPAIR 6 mm by 3.7 mm package to utilize TrenchFET Gen III technology, reducing on-resistance by 43 % when compared to previous-generation devices, while offering higher maximum current and enabling increased efficiency. Offering the industry's lowest on-resistance for this device type, the SiZ710DT combines a low- and high-side MOSFET in one compact device, saving s...

Vishay today expanded its TMBS Trench MOS Barrier Schottky rectifiers for solar bypass applications with four new 45 V devices offering eSMP® surface-mount and axial-leaded package options. The devices released today are designed to enable higher current densities in low-voltage, high-frequency inverters, and solar cell junction boxes, where they will be used as bypass diodes for photovoltaic solar cell protection.

Vishay has introduced a new 8 V p-channel TrenchFET power MOSFET featuring the industry's lowest on-resistance for a p-channel device in the 1.6 mm by 1.6 mm footprint area with a profile under 0.8 mm. In addition, the SiB437EDKT is the only such device to offer an on-resistance rating down to 1.2 V.

Vishay has expanded its offering of TMBS Trench MOS Barrier Schottky rectifiers with 12 new 45 V devices in three power package options that feature a wide range of current ratings from 10 A to 60 A. With extremely low forward voltage drops down to 0.33 V typical at 10 A, the rectifiers are optimized for use in solar cell junction boxes as bypass diodes for protection.

Vishay Intertechnology is expanding its PowerPAIR family of dual asymmetric power MOSFETs for low-voltage DC/DC converter applications with new devices that expand the series' voltage and package footprint options. The new devices make Vishay the only supplier to offer 3 mm by 3 mm, 6 mm by 3.7 mm, and 6 mm by 5 mm PowerPAIR form factors.

Vishay Intertechnology has broadened its optoelectronics portfolio with the release of a new miniaturized encoder/decoder for serial infrared (IrDA) wireless communication, the TOIM5232. The new device provides proper pulse shaping of RS-232 data signals for serial infrared (SIR) IrDA transceivers and supports data rates from 1.2kbit/s to 115.2kbit/s. Offered in the QFN (quad flat no leads) package, which measures 4mm by 4mm by 0.75mm, the TOIM5...