Search results for "gallium nitride"

Freescale Semiconductor today entered the gallium arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) marketplace with the introduction of four new devices designed and optimized specifically for high performance in macro base stations, repeaters and femtocells employed in wireless networks.

Targeting high frequency radio applications, NXP Semiconductors today announced the launch of a series of new products developed in the latest SiGe (silicon-germanium) process technology. Addressing the industry’s growing demand for more robust, cost-effective and highly integrated silicon based technology, NXP will offer a total of more than 50 products based on SiGe:C by end of 2010. Delivering high power gain and excellent dynamic range, NXP...

Representing the entire research team, Désirée Queren, Stephan Lutgen and Adrian Avramescu from OSRAM Opto Semiconductors today receive the distinguished Beckurts Prize for their pioneering work in researching direct green semiconductor lasers. This is a milestone for many applications – this laser will open up new markets, for example, in ultra-compact mobile RGB laser projectors.

TDI, part of the Oxford Instruments Group, announces the appointment of Neil Wester as General Manager. His key responsibility will be to oversee both product and process developments at TDI’s Silver Spring, Maryland, USA facility. With a Masters degree in Material Science and Engineering, Neil has extensive R&D and product development experience with key players in the Integrated-circuit, Solar, and Optoelectronic material and device industrie...

Cypress Semiconductor and United Microelectronics Corporation announced that they have produced working silicon on a new, 65-nanometer SONOS (Silicon Oxide Nitride Oxide Silicon) technology for embedded Flash memory. UMC will manufacture next-generation PSoC® programmable system-on-chip products for Cypress on the new process, along with nvSRAMs and other products. UMC will also make this technology available to other companies under a licensing...

Ostendo Technologies, Inc. (Ostendo) and Technologies and Devices International, Inc. (TDI), part of the Oxford Instruments Group, are pleased to announce that LED structures grown on their semi-polar (11-22) GaN wafers have resulted in more than 2.5x the emission intensity of the c-plane GaN based LED structures.

Marktech Optoelectronics in collaboration with Optrans Corp of Kawasaki-Shi, Japan, a leader in specialized visible and infrared emitters, sensors and assemblies have today announced the introduction of high purity, high speed InP wafers.

RFMD’s new RF3826 is a wideband Power Amplifier designed for continuous wave and pulsed applications such as wireless infrastructure, RADAR, two-way radios, and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high-performance amplifier achieves high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.

Avago Technologies (AVGO au Nasdaq), l'un des principaux fournisseurs de composants d'interface analogiques pour les communications et les applications industrielles et grand public, a présenté aujourd'hui une série de modules amplificateurs à faible bruit (LNA) de dérivation autoprotégés, destinés aux amplificateurs de pylône (TMA) et aux stations de base (BTS).

Avago Technologies (AVGO au Nasdaq), l'un des principaux fournisseurs de composants d'interface analogiques pour les communications et les applications industrielles et grand public, a présenté aujourd'hui quatre amplificateurs à faible bruit (LNA) qui augmentent les performances RF et la diversité de son portefeuille de LNA, à la pointe du marché.