Search results for "Vishay"

Vishay introduced two new series of ultra-miniature SMD quartz crystals with wide frequency ranges of 12 MHz to 25 MHz. To enable smaller end products, the XT23 and XT35 offer ceramic packages measuring 3.2 mm by 2.5 mm and 5.0 mm by 3.2 mm, respectively. Both devices feature a low profile of 0.8 mm.

Vishay Intertechnology has extended its LDO product family portfolio with the release of the new SiP21110 250-mA LDO voltage regulator. The cost-effective device features a low 35-μA typical ground current at a 1-mA load in the space-saving Thin SOT23-5L package.

Vishay has introduced the first device in a series of co-packaged, asymmetric power MOSFET pairs that reduces the space required for the high- and low-side power MOSFETs in dc-to-dc converters. The industry-first SiZ700DT in the new PowerPAIR package, which measures 6-mm by 3.7-mm, combines a low-side and high-side MOSFET in one compact device while still obtaining low on-resistance and high maximum current, saving space over using two discrete s...

Vishay has released three new 500-V MOSFETs that extend its Gen 6.2 n-channel planar FET technology to the TO-220, TO-220F, and TO-247 packages. The new SiHP18N50C (TO-220), SiHF18N50C (TO-220 FULLPAK), and SiHG20N50C combine their 500-V rating with low 0.270 Ω maximum on-resistance at a 10-V gate drive. This low RDS(on) translates into lower conduction losses that save energy in power factor correction (PFC) and pulsewidth modulation (PWM) ...

Vishay has introduced a new dual 20-V p-channel TrenchFET Gen III power MOSFET with the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK SC-70 2-mm by 2-mm footprint area.

Vishay Intertechnology has expanded its family of Gen III TrenchFET power MOSFETs with the release of two 20-V and two 30-V n-channel devices that are the first to offer TurboFET technology, which utilizes a new charge balanced drain structure to lower the gate charge by up to 45%, enabling significantly lower switching losses and faster switching.

Vishay Intertechnology, Inc. today released three new 500-V, 12-A n-channel power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10-V gate drive, and an improved gate charge of 48 nC in TO-220, TO-220 FULLPAK, and D2PAK (TO-263) packages.

To assist customers in understanding how co-packaging high- and low-side MOSFETs in one compact device can save on space and costs for dc-to-dc converters, Vishay Intertechnology, Inc. (NYSE: VSH) has added a new streaming video to its website (http://www.vishay.com) highlighting the company's SiZ700DT PowerPAIR® dual asymmetric power MOSFET solution.

Vishay Intertechnology, Inc. (NYSE: VSH) today unveiled the industry's smallest and thinnest n-channel chipscale power MOSFET and the first with a sub-1-mm2 outline. The 20-V MICRO FOOT® Si8800EDB combines an ultra-small 0.8-mm by 0.8 mm outline with a height of 0.357 mm to save space in portable electronics.

Vishay Intertechnology introduced a new dual 12-V p-channel TrenchFET Gen III power MOSFET with the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK® SC-70 2-mm by 2-mm footprint area.