Search results for "gallium nitride"

RIBER announces the sale of several research systems in Europe and Asia. Order for a double Compact 21 research system in Poland. The University of Rzeszow just ordered a double chamber Compact21 research system. It will enable the Institute of Physics to strengthen its development capacities for designing III-V and II VI component-based semiconductor systems.

Tektronix announced that validation of ASICs designed in IBM’s 8HP silicon germanium (SiGe) BiCMOS Specialty Foundry technology are exceeding target specifications for a planned new performance oscilloscope capable of greater than 30 GHz bandwidth across multiple channels while minimizing noise found in older chip sets.

Skyworks Solutions, Inc. has introduced a new family of antenna switch modules (ASMs) for dual and triple-mode smart phones, tablets and datacards.

Microsemi Corporation has expanded its family of S-band RF power transistors to include devices that use advanced gallium nitride (GaN) process technology on a silicon carbide (SiC) substrate. The company's GaN-on-SiC high-pulsed power transistors deliver industry-leading peak power and power gain for radar systems operating in the 2.7 GHz to 3.5 GHz frequency band.

Renesas Electronics has announced the availability of an IGBT drive optocoupler product, the PS9402, featuring an integrated insulated gate bipolar transistor (IGBT, Note 1) protection function. The PS9402 optocoupler comprises a gallium-aluminium-arsenide (GaAlAs) LED as the light emitting element, a photodetector IC, and an IGBT protection circuit.

MSC now offers the new PS9402 optocoupler from Renesas Electronics. The PS9402 comprises a gallium-aluminum-arsenide (GaAlAs) LED, a photo detector IC and an IGBT protection circuit. It enables particularly space and cost-saving designs of inverters for motor control, solar power generation systems, etc.

Some year s ago, the color range of Light Emitting Diodes ( L EDs) on the market was limited to the red to green spectrum. Then, blue LEDs were developed and introduced into the market . These blue devices made it possible to build so called “ single- chip white ” LEDs, using a yellow converter material in combination with a blue die. Most of the blue and white LEDs use Indium Gallium Nitrite (InGaN) as an epitaxial layer.

The California Energy Commission (CEC) has awarded $500,000 to Applied Materials Inc for a research project to develop an improved and more cost-effective way to manufacture light-emitting diodes.

Researchers Discover New Method for Boosting the Light Output of Green LEDs — A Critical Step Toward the Development of LED Televisions and Displays

Researchers at OSRAM Opto Semiconductors have succeeded in manufacturing high-performance blue and white LED prototypes in which the light-emitting gallium-nitride layers are grown on silicon wafers with a diameter of 150 millimeters (approx. 6 inches). The silicon wafers replace the sapphire substrates commonly used in the industry up to now, with no loss of quality. Already in the pilot stage, the new LED chips are being tested under practical ...