Search results for "gallium nitride"

Renesas have announced the expansion of the lineup of the RX63T group of microcontrollers. The new RX63T MCUs have higher pin counts and larger memory versions. They also expand the functions that they feature, such as USB 2.0, a 10-bit D/A converter, and faster ADC with a minimum conversion time of 0.5 microseconds (µs), and increase the number of channels of timers and serial I/Fs.

Keithley Instruments has introduced seven instrumentation, software, and test fixture configurations for parametric curve tracing applications for characterizing high power devices at up to 3,000V and 100A. They’re optimized to provide the industry’s most cost-effective solution for characterizing the growing number of high power semiconductor devices, including those based on silicon carbide and gallium nitride technology.

The RNCH is a high power version of Stackpole’s award winning RNCS series of anti-corrosive passivated nichrome thin film chip resistors. The RNCH offers the power rating of the RNCS0805 in the 0603 size and similar power upgrades for the 0805 and 1206 sizes.

Plessey today announced that it has been shortlisted for its new innovative MAGIC (MAnufactured on GaN ICs) High Brightness LED (HBLED) products in the Elektra Awards 2012 Solid-State Lighting Application Category. The winners will be revealed on Wednesday, 12 December 2012 at the European Electronics Industry Awards ceremony in London.

Mitsubishi Electric has introduced a GaN High-Electron Mobility Transistor designed for Ku band amplifiers used in very small aperture terminal satellite earth stations. The new MGFK47G3745 provides an industry-leading output power of 50W and a power-added efficiency of 30%.

Vishay Intertechnology today launched a new surface-mount chip resistor with a QPL MIL-PRF-55342 listing and an established reliability “M” failure rate of 100 ppm. Built using a moisture-resistant tantalum nitride resistive film technology, the new E/H (Ta2N) QPL resistors offer enhanced specifications for military and aerospace applications, including tolerances to 0.1 % and a TCR of 25 ppm/°C.

ON Semiconductor has joined the multi-partner, industrial research and development program at imec, a leading nanoelectronics research center, to collaborate on the development of next-generation Gallium Nitride on silicon power devices.

Osram Opto Semiconductors now offers its first direct green diode lasers. The two compact laser diodes have an optical output of 30 and 50 milliwatts and a particularly high beam quality so they represent a milestone in the development of miniature projectors for mobile devices such as smartphones and cameras. Projection units for laser shows, point lasers and line lasers will also benefit from the new technology.

TriQuint has won a new gallium nitride contract from the Defense Advanced Research Projects Agency to enable a threefold increase in circuit power handing. The Near Junction Thermal Transport effort will focus on reducing heat that can limit GaN circuit capabilities in defense and commercial systems.

When checking Drain Breakdown Voltage (BVDSS) manually, the voltage is slowly increased until a target current is reached. A faster, more efficient way to make this measurement is to source the target current and read the voltage at which the device settles. This requires an instrument that provides both an accurate, fast-acting voltage meter and a voltage clamp.