Search results for "gallium nitride"

The market for electric vehicle inverters, including converters, for both hybrid and pure electric vehicles land, water and air, will grow to $18 billion in 2023 as forecasted in the new IDTechEx report Inverters for Electric Vehicles 2013-2023. The demand for inverters and electric power conversions is already well established in the automation and industrial control industries which are also growing at considerable pace. Therefore, the addition...

Microsemi has expanded its family of radio frequency transistors based on gallium nitride on silicon carbide technologies with a new S-band 500 watt RF device. The 2729GN-500 is targeted at high-power air traffic control airport surveillance radar applications. ASR is used to monitor and control aircrafts in the terminal within approximately 100 miles of an airport.

Silicon’s crown is under threat: the semiconductor’s days as the king of microchips for computers and smart devices could be numbered, thanks to the development of the smallest transistor ever to be built from a rival material, indium gallium arsenide. The compound transistor, built by a team in MIT’s Microsystems Technology Laboratories, performs well despite being just 22 nanometers (billionths of a meter) in length.

Vishay Intertechnology Inc today released the new MPMA series of precision matched-pair resistors. MPMA resistor networks are AEC-Q200 qualified and packaged in a compact, molded surface-mount SOT-23.

RF Micro Devices today announced that RFMD has production released two highly linear gallium nitride (GaN) RF unmatched power transistors—RFHA3942 (35W) and RFHA3944 (65W)—that deliver superior linear performance versus competing GaN transistors.

Laird Technologies has today announced the release of its new eTEG Series Thin Film Energy Harvesting product line. The eTEG Series are thermoelectric power generators that harvest waste heat and convert it in to usable output DC power. Due to their micro scale size and higher output power density, these devices are especially suitable for use in wireless sensors, LED lighting and battery charging applications.

Renesas today announced the expansion of the lineup of the RX63T group of microcontrollers. The new RX63T MCUs have higher pin counts and larger memory versions. They also expand the functions that they feature, such as USB 2.0, a 10-bit D/A converter, and faster ADC with a minimum conversion time of 0.5 microseconds, and increase the number of channels of timers and serial I/Fs.

Advantest has announced that it has developed a new EB (electron beam) lithography system, the F7000, with superior resolution performance meeting the requirements for 1Xnm technology nodes. The F7000 supports substrates of diverse materials, sizes, and shapes, including nanoimprint templates as well as wafers, and is optimized for diverse applications such as advanced LSIs, photonics, MEMS, and other nano-processes.

RF Micro Devices today announced it has been awarded a $2.1 million contract from the Defense Advanced Research Projects Agency to enhance the thermal efficiency of gallium nitride (GaN) circuits used in high power radar and other military systems.

The modern day LED was born 50 years ago this month. Jeanine Chrobak-Kando, Business Development Manager at Verbatim, describes how far the lighting technology has come in such a short time.