Search results for "gallium nitride"

Transphorm announce the Total GaN family of Gallium Nitride on silicon transistors and diodes, establishing the world’s first JEDEC-qualified 600 V GaN device platform. This marks a significant milestone in the broad adoption of GaN-based power electronics in power supplies and adapters, PV inverters for solar panels, motor drives, as well as power conversion for electric vehicles.

GaN Systems has announced special pricing for its gallium nitride evaluation kits for customers who pre-order at the APEC (Long Beach, Ca, March 17-21) and PCIM (Nuremburg, Germany, May 14-16) power events.

Arkansas Power Electronics International and GaN Systems announce the test results for a gallium nitride power switch based DC-DC boost converter. The converter demonstrated at APEI exploited the ultra-high switching capability of GaN Systems’ high power switch to achieve a 1 MHz switching capability. In addition, the boost converter was able to demonstrate over 98.5% efficiency at 5 kW output power. Testing demonstrated turn-on and turn-off tr...

Picosun reports that its PICOPLATFORM 300 ALD cluster tool has been selected by a key customer in Asia for new memory applications. The 300 mm cluster design is based on the company’s long-term top product, the fully automated, multifunctional PICOPLATFORM ALD deposition unit for parallel, simultaneous execution of several different processes for high-k and metal/metal nitride films.

RF Micro Devices have today announced a new Gallium Arsenide sourcing strategy intended to increase manufacturing flexibility, expand gross margin, and support aggressive growth. RFMD will phase out manufacturing in its Newton Aycliffe, UK-based GaAs pHEMT facility and transition most GaAs manufacturing to its GaAs HBT manufacturing facility in Greensboro, NC.

Transphorm today announced at the 2013 ARPA-E Energy Innovation Summit that its novel 600V Gallium Nitride (GaN) module has enabled the world’s first GaN-based high power converter. Transphorm will demonstrate the product built with its customer-partner Yaskawa Electric, Japan at the upcoming APEC 2013 industry conference.

Renesas Electronics has developed a new split gate (SG) flash memory circuit technology for on-chip flash memory microcontrollers (MCUs) that adopts the industry's leading-edge 40 nanometer (nm) process technology achieve high reliability, low power consumption and the industry’s fastest random access operation speeds.

Efficient Power Conversion Corporation today announced the availability of the EPC9004 development board, featuring EPC’s enhancement-mode gallium nitride field effect transistors. This board demonstrates how recently introduced IC gate drivers, optimized for GaN FETs, make the task of transitioning from silicon power transistors to higher performance eGaN FETs simple and cost effective.

In setting up a new production project for in-house potting of temperature probes the engineers at Variohm considered a number of well-known industry standard potting compounds – and they called in the materials specialists at Intertronics.

The Technology Partnership has selected Freescale Semiconductor’s RF solutions and QorIQ Qonverge BSC9131 base station-on-chip as the foundation of an innovative, low-cost solution for delivering high-speed broadband service over white space spectrum.