Search results for "gallium nitride"

Freescale Semiconductor today introduced an advanced gallium arsenide monolithic microwave integrated circuit control circuit specifically designed to optimize the performance of Freescale Airfast Doherty amplifiers.

GaN Systems will exhibit at the PCIM conference and exhibition and conference. Visitors to stand 523, Hall 9 will be able to take advantage of a special introductory offer covering the company’s soon-to-be-available evaluation kits.

How do sensitive electronic devices survive the increasingly hostile environments experienced by downhole drilling equipment? Sally Ward-Foxton investigates in this article from ES Design magazine.

Nujira will be presenting new performance results at the IEEE MTT International Microwave Symposium this week demonstrating that the company has bettered its own world record linearity mark for an RF Power Amplifier operating under ET conditions.

Mouser Electronics, Inc. now stocks the new Fairchild FOD8160 logic gate Optocoupler that is ideal for energy generation and distribution, industrial motor, and uninterruptible power supply applications. The FOD8160 high-speed optocoupler supports isolated communications to allow digital signals to communicate between systems without conducting ground loops or hazardous voltages.

Efficient Power Conversion introduces the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride field effect transistor in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

Efficient Power Conversion today announces the availability of the EPC9005 development board, featuring EPC’s enhancement-mode gallium nitride field effect transistors. This board demonstrates how IC gate drivers, optimized for eGaN FETs, make the task of transitioning from silicon to eGaN technology simple and cost effective.

Removing barriers to the widespread adoption of LED lighting, Soraa announced today 230V GU10 and 100V E11 versions of its new perfect spectrum SORAA VIVID 2 and PREMIUM 2 LED MR16 lamps—the first ultra-efficient replacements for 65-watt and 75-watt halogen lamps. A technological breakthrough made possible by Soraa's world-record performance gallium-nitride on gallium-nitride (GaN on GaN™) LEDs, the new SORAA LED MR16 lamps deliver the indust...

Gallium Arsenide is the industry’s most efficient photovoltaic material, the trouble is it’s so expensive — or is it? Philip Ling talks to a company that believes it can deliver more efficient solar cells at a price that will generate world wide demand.

Plessey today announced that samples of its Gallium Nitride (GaN) on silicon LED products (p/n PLW111010) are today available. These entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially available anywhere in the world. Plessey is using its proprietary large diameter GaN on silicon process technology to manufacture the LEDs on its 6-inch MAGICTM (Manufactured on GaN I/C) line at its Plymouth, ...