Search results for "SiC MOSFET"
What is gallium nitride (GaN)? – the next step in semiconductors
In this article, Electronic Specifier will answer the question - what is gallium nitride (GaN)? Also exploring where its origins lie, and how it’s being utilised today.
ICeGaN to enable 100kW/rack data centres
It could be argued that the power requirement for data centres is getting out of hand. If you look back even just a few years, the accepted demand to drive CPUs and typical servers was 10 to 15 kilowatts per rack. But now – driven by the voracious appetite of high-performance GPUs used in generative AI – the expectation is that 100kW/rack will be needed…indeed some customers are talking about 200kW/rack. Couple this massive ord...
Cinergia’s Rack Series now available from Intepro
Intepro Systems, a provider of test and measurement solutions, has announced the release of Cinergia’s Rack Series Family of regenerative power converters for testing platforms and end-of-line (EOL) testing.
Taiwan Semiconductor’s launches AEC-Q101 MOSFETs
Taiwan Semiconductor, globalsupplier of discrete power electronics devices, LED drivers, analog ICs, and ESD protection devices, introduces a new line of AEC-Q101-qualified, small-signal MOSFETs.
Toshiba extends 150V N-channel power U-MOS X-H MOSFET lineup
Toshiba has added two new 150V N-channel power MOSFET products based upon their latest generation U-MOS X-H Trench process.
Digitally controlled hybrid energy storage system
A new, digitally controlled hybrid energy storage system (HESS) can double the service life of a battery and improve the temperature behaviour of the overall system, for example to support fast charging. The patented system was developed by Rutronik together with the West Saxon University of Applied Sciences in Zwickau.
Using the Sitara MCU AM263x in an Automotive SiC Traction Inverter
The traction inverter is the main power processing system in an electric vehicle. The real time control of this power processing block being a critical task, needs a microcontroller unit (MCU) with low latency peripherals and deterministic processing time.
ROHM and Toshiba agree to collaborate in manufacturing power devices
A plan by ROHM and Toshiba Electronic Devices and Storage to collaborate in the manufacture and increased volume production of power devices has been recognised and will be supported by the Ministry of Economy, Trade and Industry as a measure supporting the Japanese Government’s target of secure and stable semiconductor supply.
Lowest resistance, lowest losses
Würth Elektronikoffers itsWE-MXGI– a power inductor with unprecedented properties.
High-power, high-performance automotive SiC traction inverter reference design
TIDM-02014 is a 800-V, 300kW SiC-based traction inverter system reference design developed by Texas Instruments and Wolfspeed provides a foundation for OEMs and design engineers to create high-performance, high-efficiency traction inverter systems and get to market faster.