SiC MOSFETs selected for use within solar converter

According to Cree, the 1200V MOSFETs feature faster switching characteristics and up to one-third of the switching losses when compared to 900V SiC MOSFETs. Lower total system energy losses, higher frequency switching and cooler operating temperatures are enabled by the MOSFET's lower switching losses. This in turn, improves conversion efficiency and reduces the system’s size, weight, complexity, and thermal management requirements. Therefore, the MOSFETs ultimately decrease the inverters operating costs while extending its lifetime. Also available in 1700V, the C2M family of MOSFETs are claimed to provide up to three times the power density of typical SiCs. 

"Through this partnership with Cree and their SiC technology, Sanix is able to capture more market share in the competitive Japan solar market," said Hiroshi Soga, General Manager, Sanix Incorporated. "Cree’s silicon carbide MOSFETs were critical for Sanix to meet our efficiency and thermal design targets. SiC switches reduced losses in our inverter electronics by more than 30% versus the silicon super-junction MOSFETs we were considering. In addition to providing a large efficiency gain, Cree’s latest generation C2M SiC MOSFETs were priced competitively, making it possible to replace lower voltage, less rugged, and less efficient silicon MOSFETs."

"Cree is extremely pleased that Sanix has chosen to specify our C2M, 1200V SiC MOSFET technology in its new 9.9kW solar inverters. Cree SiC power devices can provide significant advantages with regard to PV inverter efficiency, reliability, and cost, and will provide Sanix with a critical competitive advantage as they continue to expand their share of the Japanese solar market," said Cengiz Balkas, General Manager and Vice President, Cree Power and RF.