PFC reference design for HEV/EV onboard charger

12th July 2018

Lanna Deamer

0 0

This reference design functions from a base of Silicon Carbide (SiC) MOSFETs that are driven by a C2000 microcontroller (MCU) with SiC-isolated gate drivers. The design implements three-phase interleaving and operates in Continuous Conduction Mode (CCM) to achieve a 98.46% efficiency at a 240V input voltage and 6.6kW full power.

The C2000 controller enables phase shedding and adaptive dead-time control to improve the power factor at light load.

The gate driver board (see TIDA-01605) is capable of delivering a 4A source and 6A sink peak current.

The gate driver board implements a reinforced isolation and can withstand more than 100V/ns Common-Mode Transient Immunity (CMTI).

The gate driver board also contains the two-level turnoff circuit, which protects the MOSFET from voltage overshoot during the short circuit scenario.

Features

High power density, high efficiency PFC design to power systems up to 6.6kW
Half-bridge and compact isolated gate driver with reinforced isolation and two-level turnoff protection
Full digital control with high performance C2000 controller to enable advanced control scheme
98.46% peak efficiency, greater than 0.99 power factor and less than 2% Total Harmonic Distortion (THD)
Three-phase interleaved operation with phase shedding control

Click here to learn more.