IGBT platform increases solar inverter efficiency

Available in various bare die sizes with collector current ratings from 30 to 240A and breakdown voltages of 600 and 650V, the IGBT chips include Trench PT and FS devices, each available as sawn or unsawn die.

Offering extremely low conduction losses, the Trench PT devices feature a negative temperature coefficient for low collector-to-emitter voltages down to 1.07V at 50% rated current and 1.34V at full rated current and +125°C. With a Trench construction, the IGBTs offer a smaller size than planar devices, providing higher current density and lower thermal resistance without compromising performance and reliability. Providing breakdown voltages of up to 650V for increased reliability, the Trench PT IGBTs are optimised for low switching frequencies to 1kHz.

Vishay's Trench FS devices reduce conduction losses with collector-to-emitter saturation voltage down to 1.45V at full current and 25°C, while providing fast and soft switching for reduced power consumption and low turn-on and turn-off losses. The device's soft turn-off reduces peak overvoltages, extends power ratings, and also simplifies circuit layouts. The FS IGBTs offer a high operating temperature of up to +175°C for a more robust design, while a 6µs short circuit rating time at 150°C enables safe and reliable operation under extreme load and failure conditions. The devices' low and positive temperature coefficient of the saturation voltage enables simple paralleling.

The devices are optimised for use in power modules and can be combined with Vishay's FRED Pt Gen 4 Ultrafast soft diodes to offer exceptionally low EMI, a maximum operating temperature of +175°C, and plug & play reliability for single- and three-phase inverters, power factor correction circuits, and full- and half-bridge DC/DC converters.

Samples of the IGBT and freewheeling diode parts can be ordered now. Production ramp-up will take place in 2015, with lead times of six to eight weeks for large orders.