Toshiba’s 6th Generation 600V IGBTs Improve Hard Switching Efficiency

Toshiba’s sixth generation IGBT technology combines a finer pattern design and a thinner ‘punch through’ wafer process than the previous generation, as well as a highly optimised vertical design. As a result, devices based around the new process are able to provide lower VCE(sat) conduction losses and reduced Eon and Eoff switching losses.



New products featuring the sixth generation technology offer current ratings of 15A (GT15J341), 20A (GT20J341), 30A (GT30J341) and 50A (GT50J342). Each of the parts integrates both the IGBT and a fast reverse recovery diode connected between emitter and collector, in a single, compact package. All feature a typical VCE(sat) of 1.5V at the nominal current. The 15A and 20A parts are supplied in a isolated TO-220SIS package, while the 30A and 50A devices are available in an non-isolated TO-3P(N) (TO-247 equivalent) package.



The efficiency and performance improvements offered by the new devices can be seen for example by comparing the GT50J342 50A device and the GT30J341 30A device with their predecessors. At TC=150°C with a current of 50A the GT50J342 provides a reduction in VCE(sat) of 32% and respective reductions in Eon and Eoff of 13% and 26%. This reduces overall losses by 24% (DC bus voltage 300V and IGBT switching frequency of 20KHz). At TC=150°C with a current of 30A the GT30J341 provides a reduction in VCE(sat) of 30% and respective reductions in Eon and Eoff of 12% and 33%. This reduces overall losses by 26% (DC bus voltage 300V and IGBT switching frequency of 20KHz).