Power device analyser measures many parameters

Circuit designers employ power devices in a wide range of products, therefore requiring an accurate, thorough understanding of their performance over a wide range of conditions. However, power device data sheets typically show behaviour across only a limited range of operating conditions, and obtaining key datasheet parameters is not a straightforward process. Agilent has developed the Power Device Analyser for Circuit Design to overcome these challenges.

The analyser measures and evaluates all kinds of parameters, including IV parameters (e.g., breakdown voltage and on-resistance); three terminal capacitances (C_iss, C_oss and C_rss) with high-voltage bias; gate charge; switching time; and power losses.

It also provides a fully automated measurement of temperature dependency for all parameters, from -50ºC to +250ºC, and seamlessly integrates with Thermal Plate or Thermostream from inTest Corp.

An intuitive GUI makes it easy for even a novice user to extract critical device parameters across a wide range of current, voltage and temperature conditions.

Some of the key features of the analyser include measurement of all IV parameters (R_on, BV, Leakage, V_th, V_sat, etc.), and transistor input, output and reverse transfer capacitances (C_iss, C_oss, C_rss, C_ies, C_oes, C_res, R_g) at high-voltage biases; Q_g curve measurement; thermal test capability (-50 °C to +250 °C); and power loss (conduction, driving and switching) evaluation.

The anslyser has an oscilloscope view that supports visual verification of pulsed measurement waveforms for checking real operating bias/timing point; and a unique software interface that simulates device data sheet framework, providing an intuitive and fully automated measurement environment that anyone can use with no training required