Robust current sensing IC improves system efficiency

Measuring high currents (10-100A) through a power MOSFET or IGBT typically requires a large resistor which generates excess power losses (10~30W). By extracting the voltage across the internal Rds(on) of a power MOSFET or the VCE(on) of an IGBT during the switch’s on-time, the IR25750 eliminates large external current sensing resistors, heatsinks and excess power losses.

The IR25750’s gate drive input provides the VCC supply voltage to the IC and synchronises the Rds(on) or VCE(on) sensing circuit to the on and off times of the MOSFET or IGBT. Leveraging IR’s proprietary high-voltage technology, the device also features 600V blocking capability necessary for blocking high VDS or VCE voltages during the switch off-time. Other key features include low gate input capacitance, internal filter delay at turn-on (200ns typical) and internal 20.8V Zener clamps on GATE and CS pins.

Featuring integrated ESD and excellent latch immunity on all inputs and outputs to enable rugged monolithic protection, the IR25750 is qualified to industrial grade and moisture sensitivity level 1. These features enable dramatic efficiency and space savings in high current applications including general purpose switch mode power electronics, motor control and industrial equipment.

Lead free and RoHS compliant, the IR25750 robust general purpose current sensing IC is available in an ultra-compact SOT23-5L package.