MEMS accelerometers withstand high-g shock events

5th March 2015

Nat Bowers

0 0

Datasheet

Withstanding the extremely fast rise times typical of high-g shock events, non-ITAR controlled MEMS accelerometers have been unveiled by PCB Piezotronics. The 3501 (single-axis) and 3503 (tri-axis) high-amplitude DC response acceleration sensors are capable of measuring long duration transient motion.

Both sensors are available with ±20,000 and ±60,000g peak measurement ranges making them able to fulfil the most demanding aerospace, industrial and commercial application requirements. Both titanium housing with integral cable packages and OEM configurations are offered to cover a variety of installation requirements including surface mount, wire bond and flip chip technologies.

Characteristics include wide band frequency response, no zero-shift, damping to reduce resonance amplification, low transverse sensitivity, excellent amplitude linearity and low power consumption. Mechanical over-range stops are designed to improve survivability.

The 3501 and 3503 are manufactured using the latest and most sophisticated techniques and equipment to achieve performance levels well beyond those previously attainable. Using deep reactive ion etching equipment and techniques, the accelerometers are micromachined in-house from extremely strong single crystal silicon. The tiny MEMS elements measure just 2.5x1.7x0.9mm including a seismic mass, protective over-range stops and a full-active piezoresistive Wheatstone bridge.