IGBTs increase solar & industrial energy efficiency

26th November 2014

Nat Bowers

0 0

Utilising advanced trench-gate field-stop technology to save more energy and increase reliability, the M-series 1200V IGBTs have been introduced by STMicroelectronics. The devices are suited for use in hard-switching circuits operating at up to 20kHz in applications such as solar inverters, welding equipment, UPS and industrial motor drives.

Highly optimised conduction and turn-off characteristics, a maximum operating temperature of 175°C, a wide safe operating area with latch-up free operation and short-circuit withstand time of 10µs at 150°C ensure rugged performance in harsh ambient and electrical environments.

Minimising voltage overshoot and eliminating oscillation during switch-off, the devices' 3rd gen technology includes a new advanced design for the trench gate structure, enhanced efficiency at turn-on and an optimised high-voltage IGBT architecture. This reduces energy losses and simplifies circuit design, while low saturation voltage enables high conduction efficiency. Enabling outstanding EMI performance, the latest-gen diode technology co-packaged in anti-parallel with the IGBT provides fast recovery time and enhanced softness without significantly increasing turn-on losses.

For applications requiring increased power-handling capability, multiple IGBTs can be parallelled thanks to the positive temperature coefficient and tight parameter distribution of saturation voltage.

The 40A STGW40M120DF3, 25A STGW25M120DF3 and 15A STGW15M120DF3 are available in standard TO-247 packages, while the 40A STGWA40M120DF3, 25A STGWA25M120DF3 and 15A STGWA15M120DF3 are supplied in TO-247 long-lead packages. Prices start from $2.80 for the STGW15M120DF3 in 1,000 unit quantities.