6th Generation Mega Power Dual IGBT

8th May 2012

2001 Electronic Components Ltd

ES Admin

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Mitsubishi Electric is introducing its 6th generation Mega Power Dual (MPD) Insulated Gate Bipolar Transistor (IGBT) modules. The modules, which are for use in power converters such as large-capacity photovoltaic and wind power generation systems, are also suitable for other high-power applications e.g. in the areas of Uninterruptible Power Supply (UPS) systems and AC motor control.

The new modules’ 6th generation Carrier-Stored Trench-gate Bipolar Transistor (CSTBT) reduces collector-emitter saturation voltage by approximately 15% compared to the MPD modules of the 5th generation and the gate capacitance by 30% to 50%. Furthermore, the maximum junction temperature is raised to 175°C.

The new 6th generation MPD IGBT modules are compatible to the 5th generation IGBT modules in terms of dimensions, shape and pin configuration. Isolation voltage is now raised to 4000V. Modules of the new series are available as CM900DUC-24S (1200V/900A), CM1400DUC-24S (1200V/1400A) and CM1000DUC-34SA (1700V/1000A).

The new IGBT series is fully RoHS compliant.

Power generation systems are increasingly shifting to natural energy sources, such as wind and solar power, as part of efforts to limit carbon dioxide (CO2) emissions attributed to global warming. The 6th generation MPD Series responds to the growing need for robust power-conversion equipment in newer, large-scale megawatt-class systems. Former 5th generation series is already successfully in use since 2002.