Mitsubishi C-band GaN HEMT Amplifiers exclusive for Satellite Applications

Three of the four new devices are internally impedance-matched and specified for the frequency range from 3.7 to 4.2GHz in order to operate in one of the three separated sub-bands with more than 60% efficiency. While the MGFC50G3742S provides an output power of 50dBm (100W) with a linear power gain of 13dB the output power ratings of MGFC46G3742S and MGFC43G3742S are 46dBm (40W) and, respectively, 43dBm (20W) with linear power gains of 14dB for both components.
In order to gain 100W output with conventional GaAs amplifiers it is necessary to combine an additional amplifier with an output of approximately 25W in the final stage. By using the new GaN HEMT amplifier MGFC50G3742S from Mitsubishi Electric the designers can achieve an output power of 100W already from a single device at the form factor of a conventional 25W GaAs amplifier. Furthermore, the new device operates with a very high power-added efficiency of 60%. The package size of these three new components is 17.4 x 24.0 x 4.3mm.

The forth new device dubbed MGF2633GS is not internally impedance-matched, designed specifically for operation at 4.0GHz with an efficiency of 50% while providing an output power of 33dBm (2W) with a linear power gain of 12dB. The MGF2633GS is integrated in a package measuring just 2.5 x 8.5 x 2.0mm.

All four new GaN HEMT amplifiers fulfil the demands of satellite applications requiring an operating time of one million hours at a maximum chip temperature of 175°C and the capability to operate under the severe conditions found in space. The new transistors offer the possibility to replace expensive travelling wave tube amplifiers (TWTA’s**) by GaN based solid state power amplifiers (SSPA’s***).