Power
IXYS Introduce 2.2kV Rugged 15.4kA Rectifier Diode For High Power Management
IXYS has introduced the first of a new range of 83mm diameter die rectifier diodes. The new 2.2kV rectifier, has a current rating of 15,450 amperes, represent a new technology platform for bonded-wafer level construction with a favourable high power density- “more power less package”. This technology offers better electromechanical and thermal performance as compared to prior designs.
The “The thermal capacity of the metal disc and its direct fusion to the silicon enhances performance and gives excellent transient thermal and surge current ratings. The new package design, which retains an industry standard footprint, allows for the maximum silicon to package ratio and represents a 46% increase in current density over older designs in a similar package outline. It is an extension of our proven 83mm Si technology that we introduced recently for our high performance 2.8kV and 4.5kV Phase Control Thyristors,” commented Frank Wakeman, Marketing and Technical Support Manager for IXYS UK.
The device is available in an industry standard 26mm thick package and two voltage grades. Designations: W8570TJ180 (1800V) and W8570TJ220 (2200V). Additional products with voltage ratings up to 6kV will be launched through 2013 as well as a 36mm thicker package option.
Typical applications for these devices include: Track side rectifiers, Chemical power supplies, Industrial rectifiers and all rectifier applications requiring very high powers.
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