Vishay p-channel MOSFETs offer industry-low RDS(on)

19th November 2013

Vishay

Nat Bowers

0 0

Vishay Intertechnology introduce new third-generation TrenchFET p-channel Gen III power MOSFETs in PowerPAK ChipFET and PowerPAK 1212-8S packages. With footprint areas of just 3.0 mm x 1.9 mm and 3.3 mm x 3.3 mm, the new MOSFETs are suitable for a wide range of applications, including power management in smartphones, tablets, notebooks, industrial sensors, and POL modules.

Optimised for load, battery, and supervisory switches, the Si5411EDU, Si5415AEDU, and SiSS23DN are designed to increase power efficiency in mobile computing and industrial control devices. With , designers can achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times.

Providing low on-resistance of 8.2 mΩ (-4.5 V) and 11.7 mΩ (-2.5 V) in the 3.0 mm by 1.9 mm PowerPAK ChipFET package, the -12 V Si5411EDU is perfectly suited for applications where saving PCB space is critical. Offering RDS(on) values of 9.6 mΩ (-4.5 V) and 13.2 mΩ (-2.5 V) in the same package, the -20 V Si5415AEDU is useful when a higher voltage rating is needed. Both the Si5411EDU and the Si5415AEDU provide typical ESD protection of 5000 V. The SiSS23DN is ideal for applications requiring extremely low on-resistance, providing values of 4.5 mΩ (-4.5 V) and 6.3 mΩ (-2.5 V) in the 3.3 mm by 3.3 mm PowerPAK 1212-8S package with a low 0.75 mm profile.

100 % Rg- and UIS-tested, the Si5411EDU, Si5415AEDU, and SiSS23DN MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.