Vishay 40V MOSFET offers 0.34mΩ RDS(ON) for high efficiency

Compared to competing devices in the same footprint, the Vishay Siliconix SiJK140E slashes on-resistance by 32% while offering 58% lower on-resistance than 40V MOSFETs in the TO-263-7L.

With on-resistance down to 0.34mΩ typical at 10V, the device released today minimises power losses from conduction to increase efficiency while improving thermal performance with a low RthJC of 0.21°C/W typical. By allowing designers to utilise one device instead of two in parallel to achieve the same low on-resistance, the SiJK140E also improves reliability and mean time between failures (MTBF).

The MOSFET features a bond-wireless (BWL) design that minimises parasitic inductance while maximising current capability. While TO-263-7L solutions in bond-wired (BW) packages are limited to currents of 200A, the SiJK140E offers a continuous drain current up to 795A for increased power density while providing a robust SOA capability. Occupying an area of 120mm2, the device’s PowerPAK 10 x 12 package saves 27% PCB space compared to the TO-263-7L while offering a 50% lower profile.

The SiJK140E is ideal for synchronous rectification, hot swap switching, and OR-ing functionality. Typical applications will include motor drive controls, power tools, welding equipment, plasma cutting machines, battery management systems, robotics, and 3D printers. To avoid shoot-through in these products, the standard-level FET offers a high threshold voltage of 2.4Vgs. RoHS-compliant and halogen-free, the MOSFET is 100% Rg and UIS tested.

Comparison Table PowerPAK 10 x 12 vs. TO-263-7L

Samples and production quantities of the SiJK140E are available now, with lead times of 36 weeks.