Ultrafast RF MOSFET driver has high peak output current

The IXRFD615 can source and sink 15 Amperes of peak current while producing voltage rise and fall times of less than 5ns and minimum pulse widths of 8ns. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range.

The IXRFD615 is packaged in a low-inductance surface mount RF package incorporating advanced layout techniques to minimise stray lead inductances for optimum switching performance.

Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFD615 unmatched in performance and value.

Features:

• Isolated substrate
  • High isolation voltage (in excess of 2500 V)
  • Excellent thermal transfer
  • Increased temperature and power cycling capability
• High peak output current
• Low output impedance
• Low quiescent supply current
• Low propagation delay
• High capacitive load drive capability
• Wide operating voltage range

Advantages:

• Optimised for RF and high speed
• Easy to mount, no insulators needed
• High power density
• RoHS compliant

Applications:

• Class D and E RF generators
• Multi-MHz switch mode power supplies
• Pulsed transformer drivers
• Pulsed laser diode drivers
• High speed pulse generators

“The IXRFD615 driver is an exciting addition to IXYSRF’s growing family of components for high frequency power RF system design,” commented Stephen Krausse, General Manager of IXYS Colorado. “Incorporating IXYS’ cutting-edge high speed CMOS die technology with IXYSRF’s low-inductance surface mount RF package, the IXRFD615 offers industry-leading RF performance.”