Ultra-small FemtoFET MOSFETs for mobile devices

5th November 2013

Nat Bowers

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Texas Instruments has today announced a new family of FemtoFET MOSFET transistors featuring ultra-small packaging and on-resistance below 100 milli-ohm. This makes the new MOSFET family the industry’s smallest, low on-resistance MOSFETS for space-constrained handheld applications, such as smartphones and tablets.

Packaged in a land grid array to reduce board space by up to 40 percent compared to chip scale packaging, six new devices have today been launched: three N-channel and three P-channel FemtoFET MOSFETs. The N-channel CSD17381F4 and the P-channel CSD25481F4 feature ultra-low on-resistance below100 milli-ohm, which is 70-percent lower than similar devices in the market today. All six FemtoFET MOSFETS provide electrostatic discharge protection greater than 4,000 V human body model.

Saving power and extending battery life, the new Texas Instruments FemtoFET MOSFET family provides On-resistance of under 100 milli-ohm (70-percent lower than similar devices). Measuring just 0.6 mm x 1.0 mm x 0.35 mm, the new MOSFETs are packaged in a FemtoFET LGA package which is 40 % smaller than standard CSP. Offering more than double the performance compared to similar size devices on the market today, the FemtoFET MOSFET family provides continuous drain current values ranging from 1.5 A to 3.1 A.

Ranging in price from $0.06 (USD) for the CSD17483F4, to $0.10 (USD) for the CSD17381F4 (all in 1,000-unit quantities), the new FemtoFET MOSFETs are available in volume now from TI and its authorized distributors.