Ultra-compact MOSFETs

2nd November 2006

Toshiba

ES Admin

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Toshiba Electronics Europe has launched two new small signal, high-efficiency p-channel MOSFETs that combine high current switching functionality with low ON-resistance, low voltage operation and ultra-compact form factors. The new MOSFETs address requirements of mobile phones, portable navigation systems and other handheld devices, which are constantly offering new functionalities that eventually lead to an increase in total power consumption. This increasing load to the battery calls for intelligent power management solutions requiring very efficient MOSFETs for load switching.

The SSM6J51TU and SSM3J120TU have dimensions of just 2.0mm x 2.1mm x 0.7mm, fitting on SOT-363 and SOT-323 footprints respectively. These MOSFETs in UF6 (SSM6J51TU) and UFM (SSM3J120TU) packages are ideal for high-performance load switching and power management applications in mobile phones or other battery-powered applications with severe PCB space constraints.

Both of the new MOSFETs will operate with gate-source voltages (VGS) down to just 1.5V and are rated for DC drain and pulse currents of up to 4A and 8A, respectively. With a VGS of 1.5V, typical ON-resistance (RDS(ON)) is just 60mΩ, falling to below 40mΩ in the case of a VGS of 2.5V. This level of performance, combined with a maximum gate threshold voltage Vth of 1V, make these MOSFETs ideally suited to main power switch applications.

Both the SSM6J51TU and SSM3J120TU offer maximum VGS ratings of ±8V and are designed to operate with channel temperatures of up to 150ºC. The SSM6J51TU features a maximum drain-source voltage (VDS) of –12V, while the SSM3J120TU offers –20V. Maximum rated power dissipation for both devices is 500mW.