TrenchFET Power MOSFET in MICRO FOOT Chipscale Package

This insulation allows the device to be used in applications with very thin height requirements, providing designers with the flexibility to place the MOSFET where other items may be directly above it, such as shielding, buttons, or touch screens, which further compress the product height when depressed. This layout flexibility also translates into reduced parasitics, as the traces can be better optimized by not having to be routed to areas on the PCB with less height restrictions.

The 20-V n-channel Si8422DB features an ultra-compact 1.55-mm by 1.55-mm footprint with a slim 0.64-mm profile. The device offers a low on-resistance range from 0.043 Ω at 1.8-V VGS to 0.037 Ω at 4.5-V VGS, with a maximum gate-source voltage of ±8 V.