Power

Transistors' 0.4mm off-board height suits wearables

10th December 2014
Nat Bowers
0
Datasheets

Claimed to be the world’s first DFN0606-packaged NPN and PNP devices, Diodes Incorporated has announced four transistors which occupy a board space of only 0.36mm2 with an off-board height of only 0.4mm. The devices are suited for wearables, such as smart watches, as well as other space-constrained consumer products, such as smartphones and tablets.

The transistors are 40% smaller than the directly competing DFN1006 (SOT883) parts and deliver the same or better electrical performance. The company's initial DFN0606 bipolar transistor offerings are two NPN and PNP devices handling a power dissipation performance as high as 830mW.

The 40V MMBT3904FZ and MMBT3906FZ significantly boost power density and also provide a high 200mA collector current; while the 45V BC847BFZ and BC857BFZ provide a collector current of 100mA. All four devices switch on at a base-emitter voltage of less than 1V, enabling them to be fully turned on under conditions of very low portable power.

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