Toshiba launches transistor for automotive

Housed in a compact SO12L-T package, the TLX9150M delivers a minimum breakdown voltage (V_OFF) of 900V with a maximum reaction (T_ON/T_OFF) time of 1ms. This is critical for control-sensitive applications such as battery and fuel-cell control and battery management systems (BMS) for monitoring voltages, and detecting mechanical relay sticking and ground faults.

The TLX9150M consists of an infrared (IR) emitting diode optically coupled to a photo-MOSFET, providing electrical isolation between the primary (control) side and the secondary (switch) side, enabling safe switch control across varying ground potentials. The trigger current (I_FT) is more than 3mA, which minimises system energy consumption. In addition, this device’s off-state current (I_OFF) is just 100nA (max) at ambient temperature, drawing minimal power while inactive. The IR LED has a forward current (I_F) rating of 30mA, while its photodetection element has an on-state current (I_ON) rating of 50mA at ambient.

In addition, the TLM9150M is housed in the new SO12L-T package with a space-saving form factor of 7.76mm × 10mm × 2.45mm, which is 25% smaller than Toshiba's existing package SO16L-T. This helps to miniaturise the battery unit and allows cost reduction. The pin pitch and pin layout of the two package sizes are the same, enabling a common circuit board pattern design.

This normally-open (1-Form-A) device exhibits 8mm (min) creepage and clearance distances and 0.4mm (min) insulation thickness, confirming effective isolation even in operating temperatures ranging from -40° to +125°C, and is fully compliant with the AEC-Q101 and IEC 60664-1 standards.