Toshiba expands its SiC diode range

These include five models in TO-247-2L packages and five in TO-247 packages, aimed at enhancing the efficiency of industrial applications such as photovoltaic (PV) inverters, electric vehicle (EV) charging stations, and switching power supplies.

The TRSxxx120Hx series features an advanced junction barrier Schottky (JBS) structure, resulting in a low forward voltage (VF) of just 1.27V (typical). By integrating a merged PiN-Schottky design within the JBS structure, the diodes reduce losses during high current operation. One model, the TRS40N120H, can handle a maximum forward DC current (IF(DC)) of 40A and a non-repetitive peak forward surge current (IFSM) of up to 270A, while the maximum case temperature (TC) across all devices reaches +175°C.

Thanks to reduced capacitive charge and leakage current, these diodes contribute to better system efficiency and simpler thermal management. For example, at a reverse voltage (VR) of 1200V, the TRS20H120H model in the TO-247-2L package delivers a total capacitive charge (QC) of 109nC and a reverse current (IR) of just 2µA.