Texas Instruments (TI) has debuted new power-management chips to support the rapidly growing power needs of modern data centres.
As the adoption of high-performance computing and artificial intelligence (AI) increases, data centres require more power-dense and efficient solutions. TI’s new TPS1685 is the industry’s first 48V integrated hot-swap eFuse with power-path protection to support data centre hardware and processing needs. To simplify data centre design, TI also introduced a new family of integrated GaN power stages, the LMG3650R035, LMG3650R025and LMG3650R070, in industry-standard TOLL packaging.
“With data centres increasingly demanding more energy, powering the world’s digital infrastructure begins with smarter, more efficient semiconductors,” said Robert Taylor, General Manager, Industrial Power Design Services. “While advanced chips drive AI’s computational power, analog semiconductors are key to maximising energy efficiency. Our latest power-management innovations are enabling data centres to reduce their environmental footprint while supporting the growing needs of our digital world.”
Reach power levels beyond 6kW with intelligent system protection
As power demands surge, data centre designers are shifting to 48V power architectures for enhanced efficiency and scalability to support components such as CPUs, graphics processing units and AI hardware accelerators. TI’s 48V stackable integrated hot-swap eFuse with power-path protection empowers designers to tackle high-power (>6kW) processing needs with a scalable device that simplifies design and reduces solution size by half compared to existing hot-swap controllers in the market.
Achieve higher efficiency with TI GaN in industry-standard packaging
In addition, TI introduced a new family of integrated GaN power stages. The LMG3650R035, LMG3650R025 and LMG3650R070 leverage the benefits of TI GaN in an industry-standard TOLL package, allowing designers to take advantage of TI GaN efficiency without costly and time-consuming redesigns.
The new power stages integrate a high-performance gate driver with a 650V GaN field-effect transistor (FET) while achieving high efficiency (>98%) and high-power density (>100W/in3). They also integrate advanced protection features including over-current protection, short-circuit protection and over-temperature protection. This is especially important for AC/DC applications like server power, where designers are challenged to push more power into smaller spaces.
Reimagining power density and efficiency at APEC 2025
At APEC 2025, TI will showcase power solutions that enable designers to reimagine new levels of power density and efficiency, including:
- Dell’s 1.8kW server power-supply unit (PSU) with TI GaN power stages: Dell’s first high-efficiency 12V PSU design uses a TI integrated GaN power stage. The PSU features a GaN FET with built-in driver, protection and temperature reporting to achieve over 96% system-level efficiency.
- Vertiv’s 5.5kW server PSU: part of Vertiv’s PowerDirect Rack DC power system, the latest PSU from Vertiv is powered by TI GaN technology to deliver up to 132kW per rack
- Greatwall’s 8kW PSU: to help designers increase power density, Greatwall and TI co-developed an 8kW open-rack PSU using TI GaN technology and TI C2000™ real-time microcontrollers
Throughout the show, TI power experts will lead 27 industry and technical sessions to address power-management design challenges. Visit TI in the Georgia World Congress Center, Booth No. 1213. The full schedule is available at ti.com/APEC.
Package, availability, and pricing
- Preproduction quantities of the TPS1685, LMG3650R035, LMG3650R025 and LMG3650R070 are available for purchase now
- Multiple payment and shipping options are available
- Evaluation modules are available for all three devices
