STMicroelectronics launches MDmesh MOSFETs

The first devices to be launched are the 650V STP65N045M9 and the 600V STP60N043DM9. Both have very low on-resistance (R_DS(on)) per unit area, which maximises power density and permits compact system dimensions. Each has the best maximum R_DS(on) (R_DS(on)max) in its category, at 45mΩ for the STP65N045M9 and 43mΩ for the STP60N043DM9. With very low gate charge (Q_g), typically 80nC at 400V drain voltage, these devices have the best R_DS(on)max x Q_g figure of merit (FoM) currently available.

The gate threshold voltage (V_GS(th)), typically 3.7V for the STP65N045M9 and 4.0V for STP60N043DM9, minimises both turn-on and turn-off switching losses compared with the earlier MDmesh M5 and M6/DM6. The MDmesh M9 and DM9 series also feature a very low reverse recovery charge (Q_rr) and reverse recovery time (t_rr), which further contribute to improved efficiency and switching performance.

A further feature of ST’s latest high-voltage MDmesh technologies is an additional platinum diffusion process that ensures a fast intrinsic body diode. The peak diode-recovery slope (dv/dt) is greater than for earlier processes. All devices belonging to MDmesh DM9 technology are extremely rugged and can withstand dv/dt up to 120V/ns at 400V.

ST’s new MDmesh M9 and DM9 devices, the STP65N045M9 and STP60N043DM9, both in a TO-220 power package, are already in production and they will be available at distributors by the end of Q2 2022.