ST launches new MasterGaN reference design

This solution is expected to accelerate the design of gallium-nitride (GaN) power supplies (PSUs) delivering efficiency and power density.

ST's MasterGaN SiPs combine GaN power transistors with gate drivers optimised to enable fast and controlled switching. Using these SiPs in place of an equivalent network of discrete components maximises performance and reliability while also accelerating design and saving PCB space at the same time.

The new reference design targets industrial applications where space is limited and efficiency is critical. Combining the MasterGaN1L, which contains two 650V 150mΩ GaN FETs, with ST’s L6599A resonant controller, the PSU achieves peak efficiency over 94% and operates without heatsinks on the primary side. Also leveraging ST’s SRK2001A synchronous-rectification controller, the unit has a compact overall footprint of 80mm x 50mm and outstanding power density of 34 watts per cubic inch (W/inch³).

The PSU can deliver up to 10A output current, equivalent to 250W at 24Vdc, while also having standby current consumption below 1µA for excellent energy saving. Protection features built into the L6599A and SRK2001A ensure resilience against overcurrent, short-circuit and overvoltage, while input-voltage monitoring ensures correct startup and provides under-voltage lockout.