Small-signal MOSFETs save space for wearables
Diodes Incorporated has introduced three small-signal MOSFETs in a tiny DFN0606 package, measuring only 0.6x0.6mm. The 20 and 30V N-channel and 30V P-channel transistors require 40% less board space than the commonly used DFN1006 (aka SOT883) packaged MOSFETs, making them suited for next-gen wearables, tablets and smartphones.
The DMN2990UFZ (20V nMOS), DMN31D5UFZ (30V nMOS) and DMP32D9UFZ (30V pMOS) have been designed to minimise on-state resistance while still maintaining a superior switching performance. According to the manufacturer, the devices deliver better or equivalent electrical performance than many of the larger package parts. A typical threshold voltage of less than 1V enables a lower ‘turn-on’ for single-cell operation.
Achieving a power dissipation of 300mW, the devices boost circuit power density and are suited for high-efficiency power-management duties and as general-purpose interfacing and simple analogue switches.
The DMN2990UFZ, DMN31D5UFZ and DMP32D9UFZ MOSFETs are available now for $0.08 each in 10,000 quantities.
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