Power
New normally-on SiC JFETs from SemiSouth feature ultra low switching losses
SemiSouth Laboratories, Inc. today launched the SJDP120R340, a normally on SiC trench JFET that, when compared with silicon MOSFETs, enables higher switching speeds and substantially lower losses. Rated at 1200V with a maximum on-state resistance of 340 mΩ (typical RDS,on of 270 mΩ), these new devices feature a positive temperature coefficient for ease of paralleling and extremely fast switching with no tail current at 150 °C.
Key Explains SemiSouth’s Director of Sales, Dieter Liesabeths: “Because of the small die size and our compact device design, the new SJDP120R340 normally on SiC trench JFETs are very cost-effective. Samples are available today; with volume production set to begin in Q2 2012 with pricing below $7 in quantities of 1000.”
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