Power
600V Vishay Siliconix Super Junction FET Power MOSFETs Feature 0.190-OHM On-Resistance in TO-220, TO-220F, TO-247, and TO-263 Packages
Vishay Intertechnology today released four new 600-V MOSFETs that extend its Super Junction FET technology to the TO-220, TO-220F, TO-247, and TO-263 packages.
The In addition to their low on resistance, the devices feature a low gate charge of 98 nC. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is a low 18.62 Ω*nC.
For reliable operation, the devices are 100 % avalanche tested and feature high repetitive (EAR) avalanche energy capabilities. Peak current handling is 65 A pulsed and 22 A continuous. All four devices feature an effective output capacitance specification.
Compared to previous-generation 600-V power MOSFETs, the new devices offer improved transconductance and reverse recovery characteristics. The MOSFETs are compliant to RoHS Directive 2002/95/EC.
Samples of the new Super Junction FET MOSFETs are available now. Production quantities will be available in Q1 2010, with lead times of 8 to 10 weeks for larger orders.