SiC power MOSFET coes in four-lead TO-247-4 package
A new silicon carbide power MOSFET from Wolfspeed is available with full design support capabilties from Richardson RFPD. The 1200 V, 75 mΩ C3M0075120K features Wolfspeed’s C3M SiC MOSFET technology and is available in an optimised four-lead TO-247-4 package with a separate driver source pin.
It features 8mm of creepage distance between drain and source, high blocking voltage with low on-resistance, high-speed switching with low capacitances, and fast intrinsic diode with low reverse recovery (Qrr).
The new device is optimised for renewable energy, EV battery charger, high-voltage DC/DC converter and switch-mode power supplies.
Key features of the C3M0075120K include a drain source voltage (Vds max) of 1200V and continuous drain current (Id) at 25°C: 30.8 A.
Maximum junction temperature is 150 °C.
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