SiC MOSFETs for high-voltage industrial applications

28th May 2014

Nat Bowers

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Designed for high-power industrial applications where efficiency is critical, Microsemi has introduced its silicon carbide (SiC) MOSFET product family with 1200V solutions. Typical applications for the APT40SM120B, APT40SM120J, APT50SM120B and APT50SM120J include solutions for solar inverters, electric vehicles, welding and medical devices.

Microsemi is well positioned to capitalise on SiC semiconductor market growth. Market researcher Yole Développement estimates that the SiC power semiconductor market will grow 39% year-over-year from 2015 to 2020, and Market Research estimates the SiC semiconductor market will grow 38% year-over-year to $5.3bn (USD) by 2022.

The SiC MOSFETs provide patented technology from Microsemi and are designed to help customers develop solutions that operate at higher frequency and improve system efficiency. The patented SiC MOSFET technology features best-in-class RDS(on) vs. temperature (according to Microsemi), ultra-low gate resistance for minimising switching energy loss, superior maximum switching frequency and outstanding ruggedness with superior short circuit withstand.

Microsemi’s 1200V SiC MOSFETs are rated at 80mΩ and 50mΩ and provide customers more development flexibility by offering both industry standard TO-247 and SOT-227 packages. The APT40SM120B is rated for 1200V, 40A, 80mΩ and is supplied in a TO-247 package. The APT40SM120J is rated for 1200V, 40A, 80mΩ and is available in a SOT-227 package. The 1200V, 50A APT50SM120B is rated for 50mΩ and is a supplied in a TO-247 package. The 1200V, 50A APT50SM120J is rated for 50mΩ and is a supplied in a SOT-227 package.

The company's 1200V SiC MOSFETs are available now in TO-247 packages and in July 2014 in SOT-227 packages.