SiC MOSFETs feature ultra low on resistance at APEC 2018

The LSIC1MO120E0120 and LSIC1MO120E0160 SiC MOSFETs offer ultra-low on-resistance (RDS(ON)) levels of just 120 and 160Ω respectively. These SiC MOSFETs are designed for use as power semiconductor switches in a wide range of various power conversion systems, outperforming their silicon MOSFET counterparts substantially in terms of blocking voltage, specific-on resistance, and junction capacitances.

They also offer a combination of high operating voltages and ultra-fast switching that traditional power transistor solutions such as silicon IGBTs with similar current ratings and packages can’t match. Typical applications for these new SiC MOSFETs include:

• Electric vehicles
• Industrial machinery
• Renewable energy (e.g., solar inverters)
• Medical equipment
• Switch-mode power supplies
• Uninterruptible power supplies (UPSs)
• Motor drives
• High voltage DC/DC converters
• Induction heating

“These new SiC MOSFETs provide power converter designers with a state-of-the-art alternative to traditional silicon-based transistors,” said Michael Ketterer, Product Marketing Manager for Power Semiconductors at Littelfuse.

“Their inherent material characteristics and ultra-fast switching capabilities offer a variety of design optimisation opportunities including increased power density, higher efficiency, and the potential for lower bill-of-material costs.”

The new 1,200V SiC MOSFETs offer these key benefits:

• A reduction in passive filter components at the system level supports increased power density, for a design that’s optimised for use in high frequency, high efficiency applications.
• Extremely low gate charge and output capacitance combined with ultra-low on-resistance allows for minimal power dissipation, higher efficiency and a reduction in the size and sophistication of the cooling techniques required.