SiC MOSFETs fast switching cuts power losses

The CoolSiC G2 MOSFET series is the next generation of silicon carbide technology, opening a new chapter in power systems and energy conversion in (SiC) MOSFET trench technology for photovoltaic inverters, energy storage systems, EV charging, power supplies and motor drive applications.

These MOSFETs offer the high quality standards in all common power scheme combinations (AC-DC, DC-DC, and DC-AC) and further advance Infineon's XT interconnection technology (e.g., in discrete housings TO-263-7, TO-247-4) to improve semiconductor chip performance and thermal capability.

Both the CoolSiC G2 650 V and 1200 V MOSFETs improve key performance for stored energy and charging by up to 20 percent without compromising quality or reliability while improving overall energy efficiency and decarbonization.

The G2's thermal capability is 12% better, boosting the CoolSiC to a new level of SiC performance with a fast switching capability that produces 5-30% lower power losses in all operation modes depending on the load condition, enabling significant energy savings.

The CoolSiC G2's new generation of SiC technology offers accelerated design of more cost-optimized, compact, reliable, and highly efficient systems, with energy harvesting savings and reduced CO₂ for every watt in the field.