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Single 12 V and 30 V P-Channel TrenchFET Power MOSFETs With Industry-Low On Resistance

1st October 2012

Vishay

ES Admin

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Vishay extends its TrenchFET Gen III family of p-channel power MOSFETs with a new single 12 V device in the thermally enhanced 2 mm by 2 mm PowerPAK SC-70 package and a single 30 V device in the 3 mm by 1.8 mm PowerPAK ChipFET package with a thin 0.8 mm profile. Both MOSFETs combine their compact footprints with the industry’s lowest on-resistance at 4.5 V for their respective form factors.

P

roduct Benefits:

• Compact PowerPAK SC-70 and PowerPAK ChipFET packages
• Save PCB space in portable electronics
• Ultra-low on-resistance of 13.5 mΩ at 4.5 V in 2 mm by 2 mm footprint and 22 mΩ in 3 mm by 1.8 mm footprint

• Lowers conduction losses for reduced power consumption and longer battery life between charges

• Lower voltage drop prevents unwanted under-voltage lockout
• On-resistance ratings down to 1.5 V (SiA447DJ) allow the MOSFET to work with the lower-voltage gate drives and lower bus voltages common in handheld electronics

• Saves the space and cost of level-shifting circuitry
• 100 % Rg tested

• RoHS compliant and halogen free

Market Applications:

• Circuit applications:

• Battery switching
• Load switching

• Power management applications for portable electronics such as

- Smart phones

-Tablet PCs

The Perspective:
Offered in the ultra-small 2 mm by 2 mm PowerPAK SC-70 package, the 12 V SiA447DJ’s on-resistance at 4.5 V is 12 % lower than the closest competing device. The 30 V Si5429DU is the first Gen III pchannel MOSFET in the 3 mm by 1.8 mm form factor, and its on-resistance at 4.5 V is 35 % lower than the closest competing device. In addition, the MOSFET offers an industry-low on-resistance of 15 mΩ at 10 V. The compact packages of the SiA447DJ and Si5429DU save valuable PCB space in portable electronics. The MOSFETs’ low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges, in addition to a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.

The 30 V rating of the Si5429DU makes it the device of choice for end products with multi-cell Li-ion batteries, while the SiA447DJ will be used when size and lower on-resistance are critical. In addition, the SiA447DJ’s on-resistance ratings down to 1.5 V allow the device to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, saving the space and cost of level-shifting circuitry.