Sanan Semiconductor expands SiC portfolio

Key highlights of the new product lineup include:

• 1700V SiC MOSFETs with 1000mΩ on-resistance
• 1700V SiC diodes available in 25A and 50A variants
• 2000V 40A SiC diodes, with a 20A version planned for release by the end of 2024
• Development of a 2000V 35mΩ SiC MOSFET (release date in 2025)

"Our new high-voltage SiC devices represent a significant leap forward in power electronics," said Leo Liao, Project Manager, Sanan Semiconductor. "By enabling higher DC voltages, these components allow for increased power output at the same current levels, or maintaining system power ratings while reducing current and energy losses dramatically."

The 1700V SiC MOSFETs and diodes are particularly well-suited for applications requiring extra voltage margins beyond traditional 1200V devices. Meanwhile, the 2000V SiC diodes can be utilsed in high DC link voltage systems up to 1500V DC, addressing the needs of industrial and power transmission applications. These advanced SiC devices offer superior efficiency compared to traditional silicon-based alternatives across a wide range of applications, including:

• Solar string inverters and power optimisers
• Electric vehicle fast charging stations
• Energy storage systems
• High-voltage power grids and energy transmission networks

"As the world transitions to cleaner energy sources and more efficient power systems, the demand for high-performance power semiconductors continues to grow," added Z.R. Zhang, VP of Sales and Marketing, Sanan Semiconductor. "Our expanded SiC portfolio demonstrates our commitment to driving innovation in this critical sector."