Rugged IGBTs suit snubberless hard-switching designs

Built using the company's proprietary XPT (Extreme-light Punch-Through) technology and 3rd generation IGBT process, the devices are designed to achieve an optimal balance between the turn-off energy loss and on-state voltage, especially in hard-switching applications. Avalanche rated and able to withstand short-circuit conditions, these IGBTs exhibit characteristics including reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. With square reverse bias safe operating areas up to the breakdown voltage of 650V, these components are extremely rugged and particularly useful for snubberless hard-switching designs.

Low gate charge allows for lower gate drive requirements, while a positive temperature coefficient of the on-state voltage enables multiple-device paralleling capability. The optional co-packed diode ‘Sonic-FRD’ (which can also be operated in parallel thanks to the temperature stability of the forward voltage) is optimised to help reduce turn-off losses and suppress ringing oscillations that can cause EMI in the system.

These 650V XPT IGBTs are available in TO-220 (regular and over-molded), TO-247, TO-263, TO-268HV (a proprietary high-voltage package with an increased creepage distance between leads, compared to the standard package), and SOT-227B packages. Some example part numbers include IXYP15N65C3D1M, IXYP10N65C3, IXYH40N65C3H1, and IXYH100N65C3, with collector current ratings of 16A, 30A, 80A, and 200A, respectively.