ROHM Isolated Gate Driver for GaN at Rutronik

The components can control GaN transistors with high electron mobility (high-electron-mobility transistor, HEMT) even at high speeds and have an isolation voltage of up to 2,500 VRMS, a minimum I/O latency of 60 ns, and a minimum input pulse width of just 65 ns. In addition, an under-voltage lockout (UVLO) is integrated into the input side (between VCC1 and GND1) and the output side (between VCC2 and GND2), respectively. The drivers operate reliably over a wide operating temperature range of -40°C to +125°C. They are currently considered the best of their kind for the industrial equipment market.

The output driver pins on the source and sink side are separated. These pins generate a switching waveform with a rise and fall edge that can be customised by inserting a resistor between the gate pins of the GaN HEMT.

The components are built into a SOP-JW8 package with a form factor of 4.9 mm x 6.0 mm x 1.65 mm.

Features at a glance:

• Built-in galvanic insulation
• Undervoltage lockout function (UVLO)
• Output voltage: 4.5 V to 6.0 V
• Input voltage: 4.5 V to 5.5 V
• Input pulse width 65 ns
• I/O delay time 60 ns

Applications examples:

• Industrial Equipment
• Industrial LiDAR
• Intermediate Bus Converters
• DC/DC converter