RF power transistor operates at up to 500MHz
Availability and full design support capabilities for a new LDMOS transistor from NXP Semiconductors have been announced by distributor Richardson RFPD. The MRF1K50H builds on the success of NXP's 1250 W MRFE6VP61K25H, delivering 1500W CW at 50V, along with superior ruggedness and thermal performance
The device can reduce the number of transistors in high-power RF amplifiers—decreasing amplifier size and BOM.
It operates up to 500MHz for a broad range of applications, from laser and plasma sources to particle accelerators, industrial welding machines, radio and VHF TV broadcast transmitters, and amateur radio linear amplifiers.
Additional key features include a high drain-source avalanche energy absorption capability, wide frequency range utilisation.
The device is suitable for linear applications and offers integrated ESD protection with greater negative gate-source voltage range for improved Class C operation.
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