RF power transistor features 20:1 load-mismatch capability
Designed for high-output class-E industrial power supplies, the STAC250V2-500E 13.6MHz RF power transistor has been released by STMicroelectronics. Providing enhanced safety up to 600W, the device has 20:1 load-mismatch capability, which is claimed to be the highest in the industry. Enabling compact power supplies above 1kW, two STAC250V2-500E transistors used together occupy a similar area to that of a single ceramic transistor.
Increasing reliability, the device provides 25% lower thermal resistance.The STAC250V2-500E, which has a maximum operating voltage of 250V, is manufactured using ST’s latest high-voltage SuperDMOS technology.
Ensuring ruggedness in class-E inductive resonant circuits or other applications such as class-D power amplifiers, the transistor has a breakdown voltage greater than 900V. The STAC250V2-500E is suitable for use in induction heaters, plasma-enhanced vapour-deposition systems, and production equipment for solar cells and flat-panel televisions.
Offered in a 0.55x1.35” STAC air-cavity package, the device is more than 50% smaller than transistors in conventional ceramic packages. The STAC250V2-500E is available now, priced at $66.00 and sold in 1,000 unit quantities.
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