RF power transistor delivers 35 W for ISM applications

The ART35FE, LDMOS power transistor provides 35 W of pulsed or CW RF energy for ISM applications ranging from 1 to 650 MHz.

Offering up to 30 dB of gain and drain efficiency of >70%, this transistor supports plasma generators, MRI systems, CO2 lasers and particle accelerators.

High breakdown voltage enables class E operation up to 48 volts VDS while the ART35FE is qualified up to a maximum VDS of 65 V.

The device is characterised from 30 to 65 volts.

Integrated dual-sided ESD protection enables class C operation and complete switch off of the transistor.

Advanced Rugged Technology (ART) is capable of withstanding load mismatches corresponding to a VSWR of 65:1.

Additional uses are found in radio and VHF TV broadcast transmitters as well as HF communications and Radar systems.