Power
NXP Delivers Best-in-Class MOSFET Solution for Power over Ethernet Applications
NXP Semiconductors today launched a new family of NextPower Live MOSFETs designed specifically for Power over Ethernet applications. Building on NXP’s strength in power MOSFETs, the new devices – PSMN040-100MSE and PSMN075-100MSE – provide twice the level of inrush current capability of competitive offerings, making them ideal for high-power PoE architectures (30W and above) such as PoE+, UPoE and LTPoE++.
PoE These new, higher power systems are placing greater demands on the MOSFETs used to supply and protect such equipment. NXP’s new NextPower Live PoE MOSFETs have a safe operating area that is twice as capable as existing solutions, providing higher levels of protection and system reliability.
NXP’s new PoE devices also offer very low RDS(on) and come in the ultra-reliable LFPAK33 package, which is footprint-compatible with similar devices.
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“Power over Ethernet is a rapidly evolving technology that requires every component in the PoE ecosystem to keep up if it’s to be more widely adopted,” said Chris Boyce, MOSFET business manager, NXP Semiconductors. “New high-power standards require high-performance protection solutions. This new class of devices from NXP delivers twice the capability of existing PoE MOSFETs and we believe will play an important role in the ongoing adoption of high power PoE.”