Power MOSFETs offer market's lowest Qg & RDS(on) per area

26th October 2015

Barney Scott

0 0

A family of Power MOSFETs from STMicroelectronics allows designers of power supplies to maximise the power efficiency of their products while enhancing robustness and safety margins. The MDmesh K5 devices are the first in the world to combine the benefits of super-junction technology with a drain-to-source breakdown voltage of 1500V, and have already captured important design wins with major customers in Asia, Europe, and the USA.

The devices address the growing demand for higher output power for auxiliary switched-mode power supplies in servers, where power-supply robustness is a key factor in minimising down-time, and in industrial applications such as welding and factory automation. For these applications, where power output ranges from 75 to 230W or above, super-junction MOSFET technology is the preferred choice because of its outstanding dynamic-switching performance.

ST’s MDmesh K5 Power MOSFET family takes this technology to the next level, with the lowest RDS_(ON) per area and the lowest gate charge (Q_g) in the market, resulting in the industry's best FoM (Figure of Merit - gate charge multiplied by on-resistance). The devices are suitable for all popular power-supply topologies, including standard, quasi-resonant and active-clamp flyback converters, and LLC half bridge converters for applications where high efficiency (up to 96%) and output powers approaching 200W are required for a wide range of input voltages.

The first two members of the family are the STW12N150K5 and the STW21N150K5, which offer maximum drain-to-source currents of 7A and 14A, respectively, with gate charge as low as 47nC (STW12N150K5) or RDS_(ON) as low as 0.9Ω (STW21N150K5). Both devices are offered in TO-247 packages in volume quantities at prices of $14 for 1,000 units.